Detection of the Scintillation Light Emitted from Direct-Bandgap Compound Semiconductors by a Si Avalanche Photodiode at 150 mK

In this work, the direct-bandgap compound semiconductor materials are irradiated by a particles emitted from Am-241 for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI2 and Cut, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK.