Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

M. Sugiho; T. Kamae; K. Makishima; T. Takahashi; T. Murakami; M. Tashiro; Y. Fukazawa; N. Iyomoto; H. Ozawa; A. Kubota; K. Nakazawa; K. Yamaoka; M. Kokubun; N. Ota; C. Tanihata; N. Isobe; Y. Terada; Y. Matsumoto; Y. Uchiyama; D. Yonetoku; I. Takahashi; J. Kotoku; S. Watanabe; Y. Ezoe

doi:10.1109/23.940093

Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, N. Iyomoto, H. Ozawa, A. Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, Y. Terada, Y. Matsumoto, Y. Uchiyama, D. YonetokuI. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

The ASTRO-E hard X-ray detector utilizes GSO(Gd₂SiO⁵:Ce 0.5% mol)-BGO(Bi₄Ge₃O₁₂) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10^-5 counts s^-1 cm^-2 keV^-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm² in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.

Original language	English
Pages (from-to)	426-429
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	48
Issue number	3 I
DOIs	https://doi.org/10.1109/23.940093
State	Published - Jun 2001
Externally published	Yes
Event	2000 Nuclear Science Symphosium (NSS) - Lyon, France Duration: 15 Oct 2000 → 20 Oct 2000

Keywords

ASTRO-E
Hard X-ray detector
P-i-n silicon diode
Spectral response

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10.1109/23.940093

Cite this

Sugiho, M., Kamae, T., Makishima, K., Takahashi, T., Murakami, T., Tashiro, M., Fukazawa, Y., Iyomoto, N., Ozawa, H., Kubota, A., Nakazawa, K., Yamaoka, K., Kokubun, M., Ota, N., Tanihata, C., Isobe, N., Terada, Y., Matsumoto, Y., Uchiyama, Y., ... Ezoe, Y. (2001). Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector. IEEE Transactions on Nuclear Science, 48(3 I), 426-429. https://doi.org/10.1109/23.940093

@article{b2748ce235034a6398a4749654b8d97a,

title = "Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector",

abstract = "The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5\% mol)-BGO(Bi4Ge3O12) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.",

keywords = "ASTRO-E, Hard X-ray detector, P-i-n silicon diode, Spectral response",

author = "M. Sugiho and T. Kamae and K. Makishima and T. Takahashi and T. Murakami and M. Tashiro and Y. Fukazawa and N. Iyomoto and H. Ozawa and A. Kubota and K. Nakazawa and K. Yamaoka and M. Kokubun and N. Ota and C. Tanihata and N. Isobe and Y. Terada and Y. Matsumoto and Y. Uchiyama and D. Yonetoku and I. Takahashi and J. Kotoku and S. Watanabe and Y. Ezoe",

year = "2001",

month = jun,

doi = "10.1109/23.940093",

language = "英語",

volume = "48",

pages = "426--429",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3 I",

note = "2000 Nuclear Science Symphosium (NSS) ; Conference date: 15-10-2000 Through 20-10-2000",

}

Sugiho, M, Kamae, T, Makishima, K, Takahashi, T, Murakami, T, Tashiro, M, Fukazawa, Y, Iyomoto, N, Ozawa, H, Kubota, A, Nakazawa, K, Yamaoka, K, Kokubun, M, Ota, N, Tanihata, C, Isobe, N, Terada, Y, Matsumoto, Y, Uchiyama, Y, Yonetoku, D, Takahashi, I, Kotoku, J, Watanabe, S & Ezoe, Y 2001, 'Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector', IEEE Transactions on Nuclear Science, vol. 48, no. 3 I, pp. 426-429. https://doi.org/10.1109/23.940093

TY - JOUR

T1 - Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

AU - Sugiho, M.

AU - Kamae, T.

AU - Makishima, K.

AU - Takahashi, T.

AU - Murakami, T.

AU - Tashiro, M.

AU - Fukazawa, Y.

AU - Iyomoto, N.

AU - Ozawa, H.

AU - Kubota, A.

AU - Nakazawa, K.

AU - Yamaoka, K.

AU - Kokubun, M.

AU - Ota, N.

AU - Tanihata, C.

AU - Isobe, N.

AU - Terada, Y.

AU - Matsumoto, Y.

AU - Uchiyama, Y.

AU - Yonetoku, D.

AU - Takahashi, I.

AU - Kotoku, J.

AU - Watanabe, S.

AU - Ezoe, Y.

PY - 2001/6

Y1 - 2001/6

N2 - The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5% mol)-BGO(Bi4Ge3O12) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.

AB - The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5% mol)-BGO(Bi4Ge3O12) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.

KW - ASTRO-E

KW - Hard X-ray detector

KW - P-i-n silicon diode

KW - Spectral response

UR - https://www.scopus.com/pages/publications/17944364085

U2 - 10.1109/23.940093

DO - 10.1109/23.940093

M3 - 会議記事

AN - SCOPUS:17944364085

SN - 0018-9499

VL - 48

SP - 426

EP - 429

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3 I

T2 - 2000 Nuclear Science Symphosium (NSS)

Y2 - 15 October 2000 through 20 October 2000

ER -

Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

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Keywords

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