Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

Ryuji Ohba; Daisuke Matsushita; Koichi Muraoka; Shinichi Yasuda; Tetsufumi Tanamoto; Ken Uchida; Shinobu Fujita

doi:10.1109/ISVLSI.2006.83

Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

Ryuji Ohba
, Daisuke Matsushita
, Koichi Muraoka
, Shinichi Yasuda
, Tetsufumi Tanamoto
, Ken Uchida
, Shinobu Fujita

Toshiba Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

Original language	English
Title of host publication	Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
Pages	231-236
Number of pages	6
DOIs	https://doi.org/10.1109/ISVLSI.2006.83
State	Published - 2006
Externally published	Yes
Event	IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 - Klarlsruhe, Germany Duration: 2 Mar 2006 → 3 Mar 2006

Publication series

Name	Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
Volume	2006

Conference

Conference	IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
Country/Territory	Germany
City	Klarlsruhe
Period	2/03/06 → 3/03/06

Access to Document

10.1109/ISVLSI.2006.83

Cite this

Ohba, R., Matsushita, D., Muraoka, K., Yasuda, S., Tanamoto, T., Uchida, K., & Fujita, S. (2006). Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. In Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 (pp. 231-236). Article 1602445 (Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006; Vol. 2006). https://doi.org/10.1109/ISVLSI.2006.83

Ohba, Ryuji ; Matsushita, Daisuke ; Muraoka, Koichi et al. / Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. 2006. pp. 231-236 (Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006).

@inproceedings{8bce027987284ddd99ed9e05ec21954f,

title = "Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation",

abstract = "It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.",

author = "Ryuji Ohba and Daisuke Matsushita and Koichi Muraoka and Shinichi Yasuda and Tetsufumi Tanamoto and Ken Uchida and Shinobu Fujita",

year = "2006",

doi = "10.1109/ISVLSI.2006.83",

language = "英語",

isbn = "0769525334",

series = "Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006",

pages = "231--236",

booktitle = "Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006",

note = "IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 ; Conference date: 02-03-2006 Through 03-03-2006",

}

Ohba, R, Matsushita, D, Muraoka, K, Yasuda, S, Tanamoto, T, Uchida, K & Fujita, S 2006, Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. in Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006., 1602445, Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006, vol. 2006, pp. 231-236, IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006, Klarlsruhe, Germany, 2/03/06. https://doi.org/10.1109/ISVLSI.2006.83

Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. / Ohba, Ryuji; Matsushita, Daisuke; Muraoka, Koichi et al.
Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. 2006. p. 231-236 1602445 (Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

AU - Ohba, Ryuji

AU - Matsushita, Daisuke

AU - Muraoka, Koichi

AU - Yasuda, Shinichi

AU - Tanamoto, Tetsufumi

AU - Uchida, Ken

AU - Fujita, Shinobu

PY - 2006

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N2 - It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

AB - It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

UR - https://www.scopus.com/pages/publications/33749324542

U2 - 10.1109/ISVLSI.2006.83

DO - 10.1109/ISVLSI.2006.83

M3 - 会議への寄与

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SN - 0769525334

SN - 9780769525334

T3 - Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006

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BT - Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006

T2 - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006

Y2 - 2 March 2006 through 3 March 2006

ER -

Ohba R, Matsushita D, Muraoka K, Yasuda S, Tanamoto T, Uchida K et al. Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. In Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. 2006. p. 231-236. 1602445. (Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006). doi: 10.1109/ISVLSI.2006.83

Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

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