Prediction of stress induced voiding lifetime in Cu Damascene interconnect by computer aided vacancy migration analysis

Haruhisa Shigeyama; Takenao Nemoto; A. Toshimitsu Yokobori

Prediction of stress induced voiding lifetime in Cu Damascene interconnect by computer aided vacancy migration analysis

Haruhisa Shigeyama
, Takenao Nemoto
, A. Toshimitsu Yokobori

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The computer aided vacancy migration analysis due to hydrostatic stress distribution was developed to predict SiV lifetime in an organic ultra low-k dielectric or silicon oxide / Cu interconnects. The SiV acceleration tests were carried out in various widths of Cu lines and these results were compared with the vacancy migration analysis. The narrower line indicated to be higher SiV failure rate in organic dielectric, while a remarkable failure rate increase in a certain width of line were observed in SiO₂ dielectric. The value of vacancy concentration obtained by the vacancy migration analysis showed similar behavior. These results reveal that the vacancy migration analysis is a practical to apply to predict reliability of interconnects.

Original language	English
Title of host publication	Advanced Metallization Conference 2010
Pages	229-230
Number of pages	2
State	Published - 2010
Externally published	Yes
Event	Advanced Metallization Conference 2010 - Albany, NY, United States Duration: 5 Oct 2010 → 7 Oct 2010

Publication series

Name	Advanced Metallization Conference (AMC)
ISSN (Print)	1540-1766

Conference

Conference	Advanced Metallization Conference 2010
Country/Territory	United States
City	Albany, NY
Period	5/10/10 → 7/10/10

Cite this

@inproceedings{0da891eca72c447eb121f97c25490ce4,

title = "Prediction of stress induced voiding lifetime in Cu Damascene interconnect by computer aided vacancy migration analysis",

abstract = "The computer aided vacancy migration analysis due to hydrostatic stress distribution was developed to predict SiV lifetime in an organic ultra low-k dielectric or silicon oxide / Cu interconnects. The SiV acceleration tests were carried out in various widths of Cu lines and these results were compared with the vacancy migration analysis. The narrower line indicated to be higher SiV failure rate in organic dielectric, while a remarkable failure rate increase in a certain width of line were observed in SiO2 dielectric. The value of vacancy concentration obtained by the vacancy migration analysis showed similar behavior. These results reveal that the vacancy migration analysis is a practical to apply to predict reliability of interconnects.",

author = "Haruhisa Shigeyama and Takenao Nemoto and \{Toshimitsu Yokobori\}, A.",

year = "2010",

language = "英語",

isbn = "9781617822810",

series = "Advanced Metallization Conference (AMC)",

pages = "229--230",

booktitle = "Advanced Metallization Conference 2010",

note = "Advanced Metallization Conference 2010 ; Conference date: 05-10-2010 Through 07-10-2010",

}

Prediction of stress induced voiding lifetime in Cu Damascene interconnect by computer aided vacancy migration analysis. / Shigeyama, Haruhisa; Nemoto, Takenao; Toshimitsu Yokobori, A.
Advanced Metallization Conference 2010. 2010. p. 229-230 (Advanced Metallization Conference (AMC)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Prediction of stress induced voiding lifetime in Cu Damascene interconnect by computer aided vacancy migration analysis

AU - Shigeyama, Haruhisa

AU - Nemoto, Takenao

AU - Toshimitsu Yokobori, A.

PY - 2010

Y1 - 2010

N2 - The computer aided vacancy migration analysis due to hydrostatic stress distribution was developed to predict SiV lifetime in an organic ultra low-k dielectric or silicon oxide / Cu interconnects. The SiV acceleration tests were carried out in various widths of Cu lines and these results were compared with the vacancy migration analysis. The narrower line indicated to be higher SiV failure rate in organic dielectric, while a remarkable failure rate increase in a certain width of line were observed in SiO2 dielectric. The value of vacancy concentration obtained by the vacancy migration analysis showed similar behavior. These results reveal that the vacancy migration analysis is a practical to apply to predict reliability of interconnects.

AB - The computer aided vacancy migration analysis due to hydrostatic stress distribution was developed to predict SiV lifetime in an organic ultra low-k dielectric or silicon oxide / Cu interconnects. The SiV acceleration tests were carried out in various widths of Cu lines and these results were compared with the vacancy migration analysis. The narrower line indicated to be higher SiV failure rate in organic dielectric, while a remarkable failure rate increase in a certain width of line were observed in SiO2 dielectric. The value of vacancy concentration obtained by the vacancy migration analysis showed similar behavior. These results reveal that the vacancy migration analysis is a practical to apply to predict reliability of interconnects.

UR - https://www.scopus.com/pages/publications/79957641855

M3 - 会議への寄与

AN - SCOPUS:79957641855

SN - 9781617822810

T3 - Advanced Metallization Conference (AMC)

SP - 229

EP - 230

BT - Advanced Metallization Conference 2010

T2 - Advanced Metallization Conference 2010

Y2 - 5 October 2010 through 7 October 2010

ER -

Prediction of stress induced voiding lifetime in Cu Damascene interconnect by computer aided vacancy migration analysis

Abstract

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Conference

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