@inproceedings{ee9c194c65ab4a0e95fb8e9bde0089a4,
title = "Numerical modeling of silicon film deposition in very-high-frequency plasma reactor",
abstract = "We present a numerical modeling of plasma-enhanced chemical vapor deposition (PECVD) of silicon film from SiH4 and H2 gas mixtures in very-high-frequency (VHF) plasma reactor. The model is composed by electron impact, gas-phase, and surface reactions in a well-mixed reactor model. A set of plasma parameters such as electron density, electron temperature and electron impact reaction rates is determined separately by nonequilibrium plasma model and used as inputs for well-mixed reactor models. The gas-phase reactions include electron impact and neutral-neutral reactions. Some of unknown rates of surface reactions are determined using quantum chemical calculations and transition state theory. In well-mixed reactor models, concentrations of each chemical species are calculated in a steady state condition using mass conservation equation uniformed through the reactor. Numerical results of growth rate as a function of plasma reactor operating parameters show good agreement with experimental ones. Finally optimal operating parameters are investigated using our model combined with design of experiments and optimization techniques.",
keywords = "Chemical vapor deposition, Electrons, Inductors, Numerical models, Plasma chemistry, Plasma density, Plasma temperature, Quantum mechanics, Semiconductor films, Silicon",
author = "K. Satake and Y. Kobayashi and S. Morita",
note = "Publisher Copyright: {\textcopyright} 2002 Japan Soc. of Applied Physics.; International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002 ; Conference date: 04-09-2002 Through 06-09-2002",
year = "2002",
doi = "10.1109/SISPAD.2002.1034535",
language = "英語",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "135--138",
booktitle = "2002 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002",
address = "米国",
}